Document Type
Thesis
Date of Award
1-31-1986
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical Engineering
First Advisor
Roy H. Cornely
Second Advisor
W. H. Warren Ball
Abstract
The deposition of GaN film onto glass substrate, using the Reactive - Ionized Cluster Beam deposition technique was studied. The creation of clusters is dictated by various parameters such as the vacuum pressure inside and outside the crucible, the crucible temperature, and the nozzle diameter of the crucible. Optimization of these parameters was experimentally studied, and deposition of gallium films on glass substrates was tried as a first step.
The direct heating method was used at first to get the 1100¬1300°C crucible temperature which was required for the creation of gallium clusters. Although different tungsten wire diameters and different number of filament turns were tried, it was rather difficult to obtain and keep the required high temperature, so another heating technique was tried. This was the electron beam heating method which was shown to be more effective.
Optical absorption edge tests, which were made on deposited films, revealed that the deposited films were composed of 30-35% gallium, 30-40% oxygen, and small percentage of other impurities. Further fine tuning of all parameters, as well as better vacuum conditions, will yield better results.
Recommended Citation
Kyriacou, Veronica S., "Optimization of reactive ionized cluster beam (R-ICB) technique for deposition of GaN films" (1986). Theses. 3420.
https://digitalcommons.njit.edu/theses/3420
