Document Type
Thesis
Date of Award
8-31-1990
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
Marek Sosnowski
Second Advisor
Haim Grebel
Third Advisor
Eugene I. Gordon
Abstract
A thin layer of semiconductor ( the guest material ) is sandwiched between two polymeric films ( the host material ) to form an artificial dielectric waveguide. An artificial dielectric is a composite material consisting of a dielectric with a large number of conducting particles arranged in a three-dimensional pattern. The particle dimensions are smaller than the optical wavelength of interest. A beam of light with a photon energy above the band-gap of the semiconductor ( pump light ) induces electric and magnetic dipoles which affect the propagation of light with a photon energy below the band-gap ( probe light ) in a slab waveguide.
The polymeric films have been prepared using plasma polymerization technique. The film of cadmium sulfide was embedded in the polymeric film by vapor deposition. The film structure and average thickness of CdS were measured using Rutherford Backscattering Spectrometry and Scanning Electron Microscope.
The waist of the near-field intensity pattern of a polymer - semiconductor - polymer waveguide was changed up to 15% for a clustered semiconductor film under the illumination from a white light source. Almost no change was detected for a continuous semiconductor film.
Recommended Citation
Ho, Hsien-Wen, "Conditional artificial dielectric waveguide" (1990). Theses. 2731.
https://digitalcommons.njit.edu/theses/2731
