High-efficiency ultraviolet emission from AlInN/GaN nanowires grown by molecular beam epitaxy
Document Type
Conference Proceeding
Publication Date
1-1-2020
Abstract
The epitaxial growth and characterization of AlInN/GaN core-shell nanowire structures with highly stable emission and high internal quantum efficiency of ~52% in the ultraviolet wavelength range are presented.
Identifier
85095455625 (Scopus)
ISBN
[9781943580767]
Publication Title
Optics Infobase Conference Papers
External Full Text Location
https://doi.org/10.1364/CLEO_SI.2020.STu3P.4
e-ISSN
21622701
Volume
Part F183-CLEO-SI 2020
Recommended Citation
Velpula, Ravi Teja; Jain, Barsha; Bui, Ha Quoc Thang; and Nguyen, Hieu Pham Trung, "High-efficiency ultraviolet emission from AlInN/GaN nanowires grown by molecular beam epitaxy" (2020). Faculty Publications. 5648.
https://digitalcommons.njit.edu/fac_pubs/5648
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