Numerical investigation on the device performance of electron blocking layer free alinn nanowire deep ultraviolet light-emitting diodes

Document Type

Article

Publication Date

2-1-2020

Abstract

We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using APSYS software and compared with simulated AlGaN nanowire DUV LEDs. From the simulation results, significant efficiency droop was observed in AlGaN based devices, attributed to the significant electron leakage. However, compared to AlGaN nanowire DUV LEDs at similar emission wavelength, the proposed single quantum well (SQW) AlInN based light-emitters offer higher internal quantum efficiency without droop up to current density of 1500 A/cm2 and high output optical power. Moreover, we find that transverse magnetic polarized emission is 5 orders stronger than transverse electric polarized emission at 238 nm wavelength. Further research shows that the performance of the AlInN DUV nanowire LEDs decreases with multiple QWs in the active region due to the presence of the non-uniform carrier distribution in the active region. This study provides important insights on the design of new type of high performance AlInN nanowire DUV LEDs, by replacing currently used AlGaN semiconductors.

Identifier

85080942901 (Scopus)

Publication Title

Optical Materials Express

External Full Text Location

https://doi.org/10.1364/OME.380409

e-ISSN

21593930

First Page

472

Last Page

483

Issue

2

Volume

10

Grant

ECCS-1944312

Fund Ref

National Science Foundation

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