High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy
Document Type
Conference Proceeding
Publication Date
5-1-2020
Abstract
The epitaxial growth and characterization of AlInN/GaN core-shell nanowire structures with highly stable emission and high internal quantum efficiency of ∼52% in the ultraviolet wavelength range are presented.
Identifier
85091674681 (Scopus)
ISBN
[9781943580767]
Publication Title
Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS
ISSN
10928081
Volume
2020-May
Recommended Citation
Velpula, Ravi Teja; Jain, Barsha; Bui, Ha Quoc Thang; and Nguyen, Hieu Pham Trung, "High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy" (2020). Faculty Publications. 5315.
https://digitalcommons.njit.edu/fac_pubs/5315
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