Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure
Document Type
Article
Publication Date
6-10-2020
Abstract
This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270 nm. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional p-type EBL-based LED structure.
Identifier
85086503209 (Scopus)
Publication Title
Applied Optics
External Full Text Location
https://doi.org/10.1364/AO.394149
e-ISSN
21553165
ISSN
1559128X
PubMed ID
32543550
First Page
5276
Last Page
5281
Issue
17
Volume
59
Grant
1944312
Fund Ref
National Science Foundation
Recommended Citation
Velpula, Ravi Teja; Jain, Barsha; Bui, Ha Quoc Thang; Shakiba, Fatemeh Mohammadi; Jude, Jeffrey; Tumuna, Moses; Nguyen, Hoang Duy; Lenka, Trupti Ranjan; and Nguyen, Hieu Pham Trung, "Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure" (2020). Faculty Publications. 5228.
https://digitalcommons.njit.edu/fac_pubs/5228
