EPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS USING SPUTTER DEPOSITION TECHNIQUES.

Document Type

Conference Proceeding

Publication Date

12-1-1983

Abstract

This paper points out both the complexities and difficulties of the sputtering approach and its compensating techniques, advantages, and achievements by reviewing published results and discussing the writer's own research on triode-sputtered mercury cadmium telluride. The experimental results for glow-discharge sputtering are emphasized; the closely related techniques and results for the relatively new ion beam sputtering approach are not discussed.

Identifier

0020975972 (Scopus)

First Page

1061

Last Page

1075

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