Conduction pronerties of annealed (Hg.8Cd.2)te thin films on silicon substrates prepared by triode-sputtering with substrate bias

Document Type

Conference Proceeding

Publication Date

11-30-1983

Abstract

A large number of (Hg8Cd2)Te films, about ten microns thick, were prepared on low-cost Si substrates by r.f.triode-sputtering in a Hg atmosphere. The sensitivity of the film conduction properties to small changes in snutter-deposition parameters (particularly Hg sputtering gas pressure and substrate dc bias and temnerature) and to post deposition annealina parameters was studied by Vanderpauw Hall effect measurements variable tempera-ture and magnetic field. Wavelength dispersive electron-probe microanalysis and optical absorption analysis were used to measure the film composition which under the proper souttering conditions matched the nominal composition value of the pressed-powder target in the 0.2-0.27 x value range. Substrate bias to remove impurities depositing during the sputter-ing process was found to be effective for obtaining n-type films with carrier concentrations as low as 1015 cm-3 at 1000°K. Although the electron mobilities were only about 10% of bulk values, the experimental results indicate that considerable improvement can be obtained by further fine tuning of the deposiiton and annealing parameters. © 1983 SPIE.

Identifier

0020945960 (Scopus)

Publication Title

Proceedings of SPIE the International Society for Optical Engineering

External Full Text Location

https://doi.org/10.1117/12.935731

e-ISSN

1996756X

ISSN

0277786X

First Page

18

Last Page

29

Volume

409

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