The In0.75Ga0.25As/In0.52Al0.48As/InP hall effect magnetic field sensor

Author

Oleg Mitrofanov, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

Fall 1-31-1998

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

Roland A. Levy

Second Advisor

John Francis Federici

Third Advisor

Trevor Tyson

Abstract

The magnetic field sensor is produced from III-V group semiconductor materials. The structure is designed for molecular beam epitaxy growth technique (MBE) on the semiinsulating InP substrate. The sensitive element is the In_0.75Ga_0.25As/In_0.52Al_0.48As heterostructure. The sensor uses the classic Hall effect in two-dimension electron gas (2DEG) formed at pseudomorphic strained epilayer of In_0.75Ga_0.25As. Properties of the 2DEG are preferential for the Hall effect sensor performance. Comparatively to bulk, electron mobility is higher. The device combines high magnetic field sensitivity and temperature stability. The sensor is designed for operation at room temperatures that makes it potentially useful in various practical applications.

Recommended Citation

Mitrofanov, Oleg, "The In0.75Ga0.25As/In0.52Al0.48As/InP hall effect magnetic field sensor" (1998). Theses. 943.
https://digitalcommons.njit.edu/theses/943