Plasma enhanced chemical vapor deposition of diamondlike carbon films using acetylene

Author

Sriram Vishwanathan, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

Spring 5-31-1998

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

Roland A. Levy

Second Advisor

N. M. Ravindra

Third Advisor

Trevor Tyson

Abstract

This study is focussed on the synthesis and characterization of diamondlike carbon (DLQ films deposited on silicon wafers and glass by plasma enhanced chemical vapor deposition (PECVD), using acetylene (C₂H₄) as a precursor. The process parameters, such as temperature, pressure, power and reactant gas flow rate have been systematically varied and their effects on the film growth rate and properties were investigated. The optimized deposition condition appeared to be at 150°C, 200mTorr, 200 Watts and flow rate = 25 sccm. For these conditions, the films were hard and found to have good adhesion to the substrate, and resistant to BF etching (49% BY diluted to 10% with distilled water). It was found that the adhesion of the DLC film to the substrate is good if the substrate is first etched with oxygen and CF₄ prior to the deposition.

Recommended Citation

Vishwanathan, Sriram, "Plasma enhanced chemical vapor deposition of diamondlike carbon films using acetylene" (1998). Theses. 907.
https://digitalcommons.njit.edu/theses/907