Document Type

Thesis

Date of Award

Spring 5-31-2000

Degree Name

Master of Science in Computer Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

N. M. Ravindra

Second Advisor

Walid Hubbi

Third Advisor

Edwin Hou

Fourth Advisor

Dentcho V. Ivanov

Fifth Advisor

Oktay H. Gokce

Abstract

Analyses of current-voltage (LV) characteristics of Schottky Barrier Diodes (Tantalum Suicide) and Metal Oxide Semiconductor (MOS) Devices, using LabVIEWTM, has been presented here. LabVIEWTMTM, a graphical program development application, has been used to program a computer-driven Keithley Source Measure Unit (SMU) for device characterization. The SMU, which can be used as a Source Voltage - Measure Current as well as Source Current - Measure Voltage instrument, is used in the Source Voltage -Measure Current mode in this study. A General Purpose Interface Bus (GPIB) IEEE 488.2 has been used to interface the SMU with LabVIEWTMTM. LabVIEWTM has been successfully implemented to obtain the current-voltage characteristics of semiconductor devices, such as TaSi2 /Si and MOS structures. Based on this characterization, factors such as the barrier height for TaSi2 /Si and current conduction mechanisms in MOS device structures have been evaluated.

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