Document Type
Thesis
Date of Award
9-30-1984
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical Engineering
First Advisor
Roy H. Cornely
Second Advisor
W. H. Warren Ball
Abstract
The deposition of (Hg1-xCdx)Te onto Si and (Hg1-yCdy)Te (x>y) substrates by rf triode sputtering was studied. Ionized mercury vapor, in the 0.6 to 1.2 micron pressure range, was used to bombard pressed-powder targets, consisting of HgTe and CdTe particles, with effective target x value of 0.3, 0.35, and 0.4. The sputtering procedure, parameters, and system were modified to optimize film characteristics. Higher substrate temperature (270°C) was required to obtain metallic gray films with x>0.3. With substrate temperatures less than 270°C and deposition rates 0.5-1.0 micron per hour the films were brown in color with high resistivity. A large number of diodes, prepared with a 0.4 target and 0.2 substrate, were fabricated. I-V measurements revealed that the diodes had a nonrectifying potential barrier with resistance of several megohms. Futher experiments and testing are necessary to determine the cause of the barrier and to further understand the deposition parameters affecting sputtered heterodiode properties.
Recommended Citation
Kokkinos, Kyriacos, "Optimization of the sputtering technology for preparation of Hg1-[subscript x] Cd[subscript x] Te Heterojunction diodes" (1984). Theses. 3585.
https://digitalcommons.njit.edu/theses/3585
