Design and construction of an atomic nitrogen source for ion cluster beam deposition of thin film nitrides

Author

• Sahar Elgharib, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

1-31-1986

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical Engineering

First Advisor

Roy H. Cornely

Second Advisor

Joseph W. Bozzelli

Third Advisor

W. H. Warren Ball

Abstract

The objective of this thesis research was to generate atomic nitrogen to react with Ga being deposited by an Ion Cluster Beam method to prepare GaN thin films. An experimental reactor was designed and constructed to generate atomic nitrogen by making use of a microwave induced discharge to dissociate molecular nitrogen into atomic nitrogen. The concentration and the flow rate of the atomic nitrogen arriving at the substrate were measured by titration with nitrous oxide. The experiments were done with 0.32 square cm quartz tubing at room temperature over the nitrogen pressure range from 0.14 torr to 0.56 torr. Results of the experiments indicate that the maximum atomic nitrogen flux produced was 2.4 x 10¹⁵ atoms/(cm².sec). The ratio of the atomic nitrogen flux out of the microwave cavity to the entering molecular nitrogen flux was between 1% to 3%. It was concluded that the flux of Ga atoms arriving at a one square cm substrate could be about 5.0 x 10¹⁴ atoms per (cm².sec.) for a GaN growth rate of one micron per hour.

Recommended Citation

Elgharib, Sahar, "Design and construction of an atomic nitrogen source for ion cluster beam deposition of thin film nitrides" (1986). Theses. 3576.
https://digitalcommons.njit.edu/theses/3576