Further development of preparation and measurement techniques for triode-sputtered mercury cadmium telluride thin films

Author

• Tai-On Chan, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

9-30-1985

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical Engineering

First Advisor

Roy H. Cornely

Abstract

The modified MRC 8800 R.F. triode sputtering system was used for mercury vapor sputtering (Hg^1-xCd^x)Te targets onto N-type (111) silicon substrates with a resistivity of 70 to 90 ohm-cm. Deposition rates were in the 2.6 to 3.6 A/sec range, A Hall mobility value, at 87°K, of 2550 Cm²/V•sec with a carrier concentration of 7(10¹⁵) cm^-3 was obtained for 9 μm thick films with an X-value of 0.25. Obtaining good sputtered films reliably was dependent on having targets that would not crack when bombarded with mercury ions. Improvements in the methods used to prepare the pressed powder targets were made and over 90% of the targets did not crack in sputtering runs when they were used for 6 to 18 hours of operation.

Recommended Citation

Chan, Tai-On, "Further development of preparation and measurement techniques for triode-sputtered mercury cadmium telluride thin films" (1985). Theses. 3461.
https://digitalcommons.njit.edu/theses/3461