Document Type
Thesis
Date of Award
1-31-1986
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical Engineering
First Advisor
Roy H. Cornely
Second Advisor
W. H. Warren Ball
Abstract
The main objective of this thesis was to grow high quality epitaxial films of the compound semiconductor Mercury-Cadmium-Telluride (MCT) on Silicon and MCT substrates,using sputtering technology. The research was aimed at investigating the heterojunction behaviour at such interfaces. Detailed studies about the heterojunction theory were made. Devices were made using MCT substrates prepared at the Santa Barbara Research Center (S.B.R. C.),California.
Experiments were designed to grow MCT films with high electron mobility and low carrier concentration in as-grown MCT films and some results were obtained close to reported data for high grade bulk material. Since the parameters involved in sputter deposition greatly influenced the film quality, an attempt was made to optimize these parameters. Hall effect measurements were made to investigate the electrical characteristics of the thin films of MCT deposited on Silicon substrates. Infrared spectro-photometric measurements were made to evaluate the optical absorption edge (cut-off wavelength).
Recommended Citation
Mistry, Ashish N., "Sputtered mercury cadmium telluride heterojunction devices : electrical characteristics and fabrication process" (1986). Theses. 3434.
https://digitalcommons.njit.edu/theses/3434
