Document Type

Thesis

Date of Award

5-31-1986

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical Engineering

First Advisor

Michael Pratap Singh

Second Advisor

Asghar Ibn Noor

Abstract

The aim of this thesis is to study and optimize the performance of NMOS sense amplifiers used in modern VLSI DRAMs.

Initially dynamic memory cells and popular sense amplifier circuits are surveyed.

A standard five transistor sense amplifier is later chosen for detailed analysis. Layout of the circuit is drawn to get the physical parameters. Using SPICE simulator, various effects of circuit parameters are studied. From these results optimal values of these parameters are arrived at.

Also an effort is made to derive theoretically equations for the latching time of a post amplifier which is the most important part in a sense amplifier.

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