Document Type
Thesis
Date of Award
9-30-1990
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
William N. Carr
Second Advisor
Ken K. Chin
Third Advisor
Edip Niver
Abstract
This thesis presents the first design and detailed Simulation of submicron vacuum microelectronic triodes static characteristics. In this thesis a new 5-electrode active device is emphasized.
These devices have potentially important advantages over semiconductor devices. They can be used in extreme environments. The picosecond transit time for internal electron ballistics provide optimism for very fast devices applications. It appears reasonable to fabricate these devices using standard VLSI processing equipment. Further, the micron dimension makes " vacuum microelectronic chips" a reasonable goal.
Devices are characterized for static parameters including electron trajectories, electric field contours, and voltage potential contours. The field emission current from cold cathodes is modelled using Fowler Nordheim theory for tunneling surfaces. Total current flow and tubes of current are obtained by integrating electron source densities over the surface of the cathode. The simulator uses an available program SIMION which has been modified by the author.
Lateral triode devices with a one micron cathode-grid spacing provide a transconductance of approx. 1 mS at 1 ma. Using supply potentials of 50 to 100 volts it appears reasonable to obtain transconductance of 1 mS using a cathode wedge tip radius of a 10 to 20 nm.
Recommended Citation
Wang, Hou-Jun, "Design and simulation of submicron microelectronic vacuum triodes" (1990). Theses. 2987.
https://digitalcommons.njit.edu/theses/2987
