Study and characterization of InGaAs photodiode and photodiode arrays

Author

Krishna R. Linga, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

12-31-1990

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

Walter F. Kosonocky

Second Advisor

Durgamadhab Misra

Third Advisor

Kenneth Sohn

Abstract

This thesis describes the InGaAs p-i-n photodiodes, photodiode arrays and their characterization. A work station was also built for the opto-electrical characterization. The main feature of the In,_zGa_iAs photodiodes with x > 0.53 is its response to higher wavelengths than the standard lattice-matched photodiodes. An In_xGa_1-xAs photodiode with x = 0.88 respond to 2.6 μm wavelength. The application of these photodiodes is forlIber optic communications, spectroscopy and instrumentation. A complete characterization and analysis of the In_0.88Ga_0.12As photodiodes is presented. Dark current analysis, which is a critical parameter in photodiodes, is described in detail, and the results show that the dark current is bulk dominated and not the surface dominated. The main contribution of dark current is believed to be due to the crystal defects and dislocation density. At high temperatures the dark current is dominated by diffusion current and at low temperatures generation-recombination current dominates. Experiments were done to drive the standard lattice-matched In_0.53Ga_0.47As photodiode arrays with EG&G Reticon RC1000/RC1001 driving circuit which provides all the necessary clocks to operate the array. Theory of measurements of spectral responsivity and quantum efficiency for the optical characterization of the photodiodes using discrete and continuous spectral source is described. Typical experimental results are presented.

Recommended Citation

Linga, Krishna R., "Study and characterization of InGaAs photodiode and photodiode arrays" (1990). Theses. 2831.
https://digitalcommons.njit.edu/theses/2831