Document Type
Thesis
Date of Award
10-31-1990
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
Haim Grebel
Second Advisor
Kenneth Sohn
Third Advisor
Durgamadhab Misra
Abstract
The Photo-Induced Electrochemical Etching of n-InP wafer in aqueous solution is investigated for both reservoir and capillary systems. A sinusoidal spatial variation of light intensity pattern is directly illuminated and promoting etching on an InP semiconductor wafer. The etching process is time-efficient, and produces highly isotropical and a promising high resolution pattern. It gives a good reproducibility and has less contaminating features. Its features may be explained by a non-linear relationship between the electrolyte concentration and the photo-generated holes density at the interaction surface. An optimal reaction rate is determined by the ratio of the reactivity to ionic diffusion, either in the reservoir or capillary system. The reaction rate can be enhanced by an external biasing field at low electrolyte concentrations.
Recommended Citation
Iskandar, Bungsu, "Photo-induced electrochemical etching of InP semiconductor in a thin film cell" (1990). Theses. 2760.
https://digitalcommons.njit.edu/theses/2760
