Reliability of titanium dioxide capacitors

Author

Md. Badrul Hasan, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

5-31-1990

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

Raj Pratap Misra

Second Advisor

S. Pandey

Third Advisor

Mauro Zambuto

Abstract

In recent years many different materials have been investigated as potential thin-film capacitor dielectrics. Silicon monoxide (SiO) and tantalum pentoxide (Ta₂O₅) are the two dielectric materials that are being used by most companies.

This thesis provides some theory and experiments to evaluate the reliability of TiO₂ as a material which would yield a dielectric constant much higher than Ta₂O₅. It has also been shown that titanium dioxide is economically and technically capable of miniaturization demanded by the latest electronic systems.

Included here are the sections covering evaporant materials and their purities, vacuum evaporation techniques, anodizing procedures, substrate materials, and dielectric and electrical properties of thin-film TiO₂ capacitors. A brief discussion has been made about the properties of titanium electrolytic capacitors to compare with those of TiO₂ capacitors.

Several failure mechanisms of TiO₂ thin-film capacitors are discussed to formulate the procedures for reaching the higher re/ ability values.

Bibliography on the reliability and characteristics of TiO₂ and Titanium Electrolytic Capacitors between the years of 1950 and 1989 is included in this thesis in a chronological order. This should be of great help to any one interested in doing further research on TiO₂ capacitors.

Recommended Citation

Hasan, Md. Badrul, "Reliability of titanium dioxide capacitors" (1990). Theses. 2712.
https://digitalcommons.njit.edu/theses/2712