Document Type

Thesis

Date of Award

12-31-1990

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

N. M. Ravindra

Second Advisor

Kenneth Sohn

Third Advisor

Durgamadhab Misra

Abstract

This thesis report presents an investigation of an OptoElectronic Integrated receiver Circuit (OEIC). An OEIC on Silicon (Si) substrate is analyzed and simulated as part of this investigation. The OEIC is based on GaAs technology. The advantages of this are its compactness, high speed, low noise and high reliability in light wave communication systems. A higher output signal is required to make such devices suitable for practical applications. This is achieved by the use of a cascode stage. The fabrication techniques of the relevant semiconductor devices have also been discussed.

In light wave communication systems, the region of minimum losses is of most interest. This region lies between 1.3-1.55 ?m wavelength range. Silica optical fibers exhibit minimum losses in this wavelength range and /72,0.53Ga0.47As photodetector has maximum quantum efficiency in this range.

The fabrication of GaAs MESFETs on Si substrate using molecular beam epitaxy grown film is also discussed. The intention is to make possible the integration of GaAs based devices with Si devices and to reduce the complexity of the fabrication technique. The process of interest is the epitaxial lift-off where an appropriate epitaxial structure is selectively removed from the original GaAs substrate and reattached to a new Si substrate. This fabrication procedure is a substitute for hetroepitaxy of GaAs on Si substrate.

Finally, calculations of the transfer function, poles & zeros have been made by the use of small signal high frequency analysis technique. The circuit simulation of OEIC is completed using SPICE3C.1 in an Ultrix environment.

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