Document Type
Thesis
Date of Award
1-31-1991
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
Durgamadhab Misra
Second Advisor
James H. Atherton
Third Advisor
Walter F. Kosonocky
Fourth Advisor
Kenneth Sohn
Abstract
A simple model based on dc behaviour of MOS transistors operating in weak inversion is derived on the basis of previous publications. The bipolar like source to drain transfer characteristics of MOS transistor in weak inversion was used to implement a voltage source that is proportional to absolute temperature (PTAT); a cell that can be stacked to obtain the desired voltage. A CMOS temperature compensated current reference is implemented using PTAT cell with MOSFET as current defining element. A CMOS magnetic field sensor has been developed. The sensitivity of sensor is dependant on the bias current; incorporation of temperature independent biasing current (current reference) will increase the sensitivity of the sensor. Simulation and test results observed have been presented and compared.
Recommended Citation
Sampath, Dilip K., "Design, fabrication, and testing of temperature compensated MAGFET" (1991). Theses. 2606.
https://digitalcommons.njit.edu/theses/2606
