Document Type
Thesis
Date of Award
5-31-1991
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical Engineering
First Advisor
Roland A. Levy
Second Advisor
James M. Grow
Third Advisor
Kenneth Sohn
Fourth Advisor
Haim Grebel
Abstract
Amorphous silicon carbide thin films were fabricated using low pressure chemical deposition method with a single liquid precursor, di tertiary butyl silane. The films were deposited for a temperature range of 500-850°C and at different pressures ranging from 0.05 to 1 torr. The growth rate of the films deposited at constant pressure of 0.2 torr with a flow rate of 60 sccm, was found to follow an Arrehenius Behavior in the temperature range of 600 - 675°C, yielding an activation energy of 32.5 k cal mol-1 . IR spectroscopic study showed an absorption peak centered at 780 cm-1, indicating the presence of Si-C vibrational mode. X-ray diffraction studies confirmed the amorphous nature of the film. Deposition temperature was found to play an important role in the stoichiometry of the film. The carbon atomic composition of the film was increased as the deposition temperature was increased, so that, at 850°C the carbon composition was 76%. Addition of acetylene was found to be an alternative method for varying the composition of the film and addition of ammonia resulted in Si-C-N type film. The films were found to be tensile in all cases.
Recommended Citation
Bhaskaran, Mahalingam, "Synthesis and characterization of LPCVD silicon carbide thin films for x-ray lithography" (1991). Theses. 2390.
https://digitalcommons.njit.edu/theses/2390
