Document Type

Thesis

Date of Award

10-31-1993

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

Kosonocky, Walter F.

Second Advisor

Manikopoulos, Constantine N.

Third Advisor

Hou, Edwin

Abstract

A finite element model for the Rapid Thermal Processing (RTP) system at NJIT was developed based on the software package MSC/NASTRAN. Based on this model, a thermal analysis of the 9" chamber, 3 zones (37 lamps) RTP system was conducted for various modes of system operation with the 6" silicon wafer temperature varying from 300°K to 1100°K. An open-loop control algorithm was developed in order to study the dependence of wafer temperature on time, position, and applied radiant heat distribution. It was shown that the non-uniformity in the radial temperature profile can be less than 3°C during wafer heating at the rate of 35°C per second.

The developed model was also utilized for the analysis of the change in the wafer temperature profile due to the heat loss through thermocouple wiring attached to the wafer. It was shown that for a 0.005" Nickel-Chromium thermocouple the maximum disturbance of the wafer temperature profile at the thermocouple contact was only of the order of 0.1°C with the wafer temperature in the interval from 800°K to 1100°K.

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