Document Type
Thesis
Date of Award
10-31-1993
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
Kosonocky, Walter F.
Second Advisor
Manikopoulos, Constantine N.
Third Advisor
Hou, Edwin
Abstract
A finite element model for the Rapid Thermal Processing (RTP) system at NJIT was developed based on the software package MSC/NASTRAN. Based on this model, a thermal analysis of the 9" chamber, 3 zones (37 lamps) RTP system was conducted for various modes of system operation with the 6" silicon wafer temperature varying from 300°K to 1100°K. An open-loop control algorithm was developed in order to study the dependence of wafer temperature on time, position, and applied radiant heat distribution. It was shown that the non-uniformity in the radial temperature profile can be less than 3°C during wafer heating at the rate of 35°C per second.
The developed model was also utilized for the analysis of the change in the wafer temperature profile due to the heat loss through thermocouple wiring attached to the wafer. It was shown that for a 0.005" Nickel-Chromium thermocouple the maximum disturbance of the wafer temperature profile at the thermocouple contact was only of the order of 0.1°C with the wafer temperature in the interval from 800°K to 1100°K.
Recommended Citation
Martynov, Helen, "Modeling of rapid thermal processing system by finite element method" (1993). Theses. 1818.
https://digitalcommons.njit.edu/theses/1818
