Document Type
Thesis
Date of Award
1-31-1993
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical Engineering
First Advisor
Edip Niver
Second Advisor
Kuohsiung Li
Third Advisor
Gary Wu
Abstract
The nonlinearity analysis for a 0.5μm gate length microwave GaAs metal-semiconductor field-effect transistor (MESFET) by HP85150B Microwave Design System was investigated. The analysis starts with the construction of a large-signal MESFET equivalent circuit model. This model consists of bias dependent elements that were extracted by the optimization of DC and small-signal S-parameter measurement data. The details on this construction procedure are included in this work. The MESFET third-order intermodulation distortion was then simulated by HP85150B Microwave Design System. Reasonable agreement was obtained between simulation and measurement results. Microwave GaAs MESFET nonlinearity principles and large-signal modeling technique review are also presented. Finally, the basis for a physics-based large-signal analytical model is outlined to the interests of a transistor or MMIC design engineer who is concerned in the microwave performance as function of device design parameters such as gate length and channel doping.
Recommended Citation
He, Yan, "Microwave GaAs MESFET nonlinearity and large-signal modeling" (1993). Theses. 1763.
https://digitalcommons.njit.edu/theses/1763
