Document Type


Date of Award

Fall 1-31-1995

Degree Name

Master of Science in Engineering Science- (M.S.)


Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

John Francis Federici

Second Advisor

Roland A. Levy

Third Advisor

David S. Kristol


In this study, a simple photolithographic pattern process for porous silicon is described. The process utilizes silicon nitride or silicon carbide coated on the top of silicon wafer as a masks. Then a test pattern was projected on the sample by illumination during anodic etching in HF:ethanol solution which produced microcracks in regions illuminated during anodization. Creation of these microcracks resulted in formation of porous silicon in the underlying regions. The cracking is related to the stress in the thin film. The films with tensile stress exhibit cracking while compressive stress samples do not. Compared to silicon carbide films, silicon nitride seems to be a more suitable etch mask for patterning porous silicon. The patterning of 100 micron features seems possible with this technology.