Date of Award
Master of Science in Engineering Science- (M.S.)
Committee for the Interdisciplinary Program in Materials Science and Engineering
John Francis Federici
Roland A. Levy
David S. Kristol
In this study, a simple photolithographic pattern process for porous silicon is described. The process utilizes silicon nitride or silicon carbide coated on the top of silicon wafer as a masks. Then a test pattern was projected on the sample by illumination during anodic etching in HF:ethanol solution which produced microcracks in regions illuminated during anodization. Creation of these microcracks resulted in formation of porous silicon in the underlying regions. The cracking is related to the stress in the thin film. The films with tensile stress exhibit cracking while compressive stress samples do not. Compared to silicon carbide films, silicon nitride seems to be a more suitable etch mask for patterning porous silicon. The patterning of 100 micron features seems possible with this technology.
Wang, Hong, "The photolithographic patterning of porous silicon using silicon nitride and silicon carbide films as masks" (1995). Theses. 1561.