Electrical, electronic and optical properties of MoS2 & WS2

Author

Weitao Tang, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

Fall 1-31-2017

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

N. M. Ravindra

Second Advisor

Yuanwei Zhang

Third Advisor

Michael Jaffe

Abstract

Two dimensional materials such as graphene, boron nitride and transition metal dichalcogenide (TMDCs) monolayers have arisen as a new class of materials with unique properties at monolayer thickness. Their electrical, electronic and optical properties are of great importance for a variety of applications in optoelectronics as light emitters, detectors, and photovoltaic devices. This work focuses on MoS₂ and WS₂, which are two important members of the TMDC class of materials. The properties of monolayer MoS₂ and WS₂ are investigated as well as the properties of bulk MoS₂ and WS₂ to provide an understanding of their significant difference.

A detailed investigation of the electrical and electronic properties including temperature dependent resistivity, contact resistance, band structure and electronic excitation are discussed in this work. The temperature dependence of the energy gap for monolayer MoS₂ and WS₂ is also investigated. The optical properties of MoS₂ and WS₂, in the range of 1.5-3.0 eV, are modeled utilizing MATLAB simulations. Simulations of the optical properties of these materials on silicon, gold and fused silica substrates are presented. The optical band gap is simulated in order to compare with the electrical band gap. The future applications of both the materials are discussed.

Recommended Citation

Tang, Weitao, "Electrical, electronic and optical properties of MoS2 & WS2" (2017). Theses. 12.
https://digitalcommons.njit.edu/theses/12