Radiation damage studies in gate oxides

Author

Sandeep G. Bharathi, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

Spring 5-31-1995

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

N. M. Ravindra

Second Advisor

Walter F. Kosonocky

Third Advisor

Marek Sosnowski

Abstract

Detailed investigation of the effects of Gamma-ray irradiation on the electrical properties such as current-voltage arid capacitance-voltage characteristics in thermally grown SiO₂ films in the thickness range of 15 to 120 nm on silicon substrates is presented in this thesis. The structures used in this study are Al/Poly/SiO₂/Si/Al and Al/SiO₂/Si/Al MOS capacitors. Based on the electrical characterization studies, we observe that irradiation causes generation of positive charges in the oxide leading to a shift of the high frequency Capacitance-Voltage (C-V) curves. An increase in surface state density at the SiO₂-Si interface with increase in radiation dose is also observed. Static current-voltage (I-V) characteristics lead to a further insight in the formation of radiation induced oxide traps. Fowler-Nordheim tunneling in irradiated MOS structures is investigated.

Recommended Citation

Bharathi, Sandeep G., "Radiation damage studies in gate oxides" (1995). Theses. 1166.
https://digitalcommons.njit.edu/theses/1166