Self-heating measurement methodologies and their assessment on bulk FinFET devices

Document Type

Conference Proceeding

Publication Date

7-2-2017

Abstract

This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.

Identifier

85047787263 (Scopus)

ISBN

[9781538623329]

Publication Title

IEEE International Integrated Reliability Workshop Final Report

External Full Text Location

https://doi.org/10.1109/IIRW.2017.8361226

e-ISSN

23748036

ISSN

19308841

First Page

1

Last Page

4

Volume

2017-October

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