Synthesis and characterization of band gap-reduced ZnO:N and ZnO:(Al,N) films for photoelectrochemical water splitting

Document Type

Article

Publication Date

1-1-2010

Abstract

ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO: (Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance. © 2010 Materials Research Society.

Identifier

77953128716 (Scopus)

Publication Title

Journal of Materials Research

External Full Text Location

https://doi.org/10.1557/jmr.2010.0017

ISSN

08842914

First Page

69

Last Page

75

Issue

1

Volume

25

Fund Ref

U.S. Department of Energy

This document is currently not available here.

Share

COinS