Influence of gas ambient on the synthesis of co-doped ZnO:(Al,N) films for photoelectrochemical water splitting

Document Type

Article

Publication Date

9-1-2010

Abstract

Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100 °C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO:N thin films grown in the same gas ambient. As a result, ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films. © 2010 Elsevier B.V.

Identifier

77953130330 (Scopus)

Publication Title

Journal of Power Sources

External Full Text Location

https://doi.org/10.1016/j.jpowsour.2010.03.058

ISSN

03787753

First Page

5801

Last Page

5805

Issue

17

Volume

195

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