Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

Document Type

Article

Publication Date

10-1-2010

Abstract

Ga-N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N2 and O2 gas ambient. We found that Ga-N co-doped ZnO films exhibited enhanced crystallinity when compared to undoped ZnO films grown under the same conditions. Furthermore, Ga-N co-doping ensured enhanced N-incorporation ZnO thin films as the substrate temperature is increased. As a result, Ga-N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared to ZnO thin films. Our results therefore suggest that the passive co-doping approach could be a means to improve PEC response for bandgap-reduced wide-bandgap oxides through impurity incorporation. © 2010 Springer Science+Business Media, LLC.

Identifier

77955473423 (Scopus)

Publication Title

Journal of Materials Science

External Full Text Location

https://doi.org/10.1007/s10853-010-4561-x

e-ISSN

15734803

ISSN

00222461

First Page

5218

Last Page

5222

Issue

19

Volume

45

Grant

DE-AC36-08GO28308

Fund Ref

U.S. Department of Energy

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