Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production

Document Type

Conference Proceeding

Publication Date

12-1-2010

Abstract

ZnO thin films with significantly reduced bandgaps were synthesized by co-doping Al and N at 100°C. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO, ZnO doped solely with N, ZnO:N, and Al doped ZnO, ZnO:Al at the same growth conditions. Furthermore, ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents compared to other films grown under similar growth conditions, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance. Copyright © 2010 MS&T'10®.

Identifier

79952653284 (Scopus)

ISBN

[9781617820328]

Publication Title

Materials Science and Technology Conference and Exhibition 2010 MS and T 10

First Page

1080

Last Page

1088

Volume

2

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