MOS capacitors with metal gate/high-k dielectrics on GaAs bulk substrate

Document Type

Article

Publication Date

12-1-2010

Abstract

This paper investigates the electrical characteristics at low temperatures through C-V, I-V and conductance measurements to understand the interface behavior of HfO 2 and p-type GaAs bulk substrate. Room temperature interface state density, D it, estimated for as-deposited Ti-Au/HfO 2/GaAs capacitors was found to be 3.68 × 10 11 cm -2 eV -1. Low temperature measurement suggests that only fast interface states contribute to the conduction process. When the characteristics of two different metal gates were compared, the accumulation capacitance density observed to be 1.4 and 8.98 fF/μm 2 for Be-Au/HfO 2/GaAs and Ti-Au/HfO 2/GaAs, respectively at 1 MHz. © 2010 Springer Science+Business Media, LLC.

Identifier

78650702288 (Scopus)

Publication Title

Journal of Materials Science Materials in Electronics

External Full Text Location

https://doi.org/10.1007/s10854-010-0069-z

e-ISSN

1573482X

ISSN

09574522

First Page

1322

Last Page

1326

Issue

12

Volume

21

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