Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes
Document Type
Conference Proceeding
Publication Date
1-1-2020
Abstract
Performance of the deep-ultraviolet LEDs is improved by replacing conventional pdoped electron blocking layer with an intrinsic 2 nm thin AlGaN strip in the last quantum barrier due to enhancement of the hole transportation.
Identifier
85095130904 (Scopus)
ISBN
[9781943580767]
Publication Title
Optics Infobase Conference Papers
External Full Text Location
https://doi.org/10.1364/CLEO_AT.2020.AF1I.3
e-ISSN
21622701
Volume
Part F181-CLEO-AT 2020
Recommended Citation
Jain, Barsha; Velpula, Ravi Teja; Thang Bui, Ha Quoc; Tumuna, Moses; Jude, Jeffrey; and Nguyen, H. P.T., "Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes" (2020). Faculty Publications. 5633.
https://digitalcommons.njit.edu/fac_pubs/5633
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