Electron Blocking Layer Free AlGaN Deep-Ultraviolet Light Emitting Diodes

Authors

Barsha Jain, Newark College of Engineering
Ravi Teja Velpula, Newark College of Engineering
Ha Quoc Thang Bui, Newark College of Engineering
Moses Tumuna, Newark College of Engineering
Jeffrey Jude, Newark College of Engineering
H. P.T. Nguyen, Newark College of Engineering

Document Type

Conference Proceeding

Publication Date

5-1-2020

Abstract

Performance of the deep-ultraviolet LEDs is improved by replacing conventional p-doped electron blocking layer with an intrinsic 2 nm thin AlGaN strip in the last quantum barrier due to enhancement of the hole transportation.

Identifier

85091644736 (Scopus)

ISBN

[9781943580767]

Publication Title

Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS

ISSN

10928081

Volume

2020-May

Recommended Citation

Jain, Barsha; Velpula, Ravi Teja; Bui, Ha Quoc Thang; Tumuna, Moses; Jude, Jeffrey; and Nguyen, H. P.T., "Electron Blocking Layer Free AlGaN Deep-Ultraviolet Light Emitting Diodes" (2020). Faculty Publications. 5320.
https://digitalcommons.njit.edu/fac_pubs/5320