Intraband quantum dot barrier devices - Optimization of energy level alignment

Authors

Shihab Bin Hafiz, Newark College of Engineering
Mohammad Mostafa Al Mahfuz, Newark College of Engineering
Dong Kyun Ko, Newark College of Engineering

Document Type

Conference Proceeding

Publication Date

1-1-2021

Abstract

Mid-infrared barrier detectors constructed from intraband colloidal quantum dots brings the advantage of greatly simplified device fabrication procedure with the potential for high temperature operation. Here, we report the fabrication and characterization of vertically-stacked Ag2Se / PbS / Ag2Se quantum dot barrier devices with improved infrared responsivity. Through optimizing the energy level alignment, 4.5 μm responsivity now reaches 84.1 mA/W which results in 570 % improvement in specific detectivity compared to the first generation quantum dot barrier devices.

Identifier

85107201195 (Scopus)

ISBN

[9781607689133]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/10201.0045ecst

e-ISSN

19385862

ISSN

19386737

First Page

45

Last Page

51

Issue

1

Volume

102

Grant

1809112

Fund Ref

National Science Foundation

Recommended Citation

Hafiz, Shihab Bin; Al Mahfuz, Mohammad Mostafa; and Ko, Dong Kyun, "Intraband quantum dot barrier devices - Optimization of energy level alignment" (2021). Faculty Publications. 4469.
https://digitalcommons.njit.edu/fac_pubs/4469