"Midwavelength Infrared p-n Heterojunction Diodes Based on Intraband Co" by Shihab Bin Hafiz, Mohammad M. Al Mahfuz et al.
 

Midwavelength Infrared p-n Heterojunction Diodes Based on Intraband Colloidal Quantum Dots

Document Type

Article

Publication Date

10-20-2021

Abstract

As an emerging member of the colloidal semiconductor quantum dot materials family, intraband quantum dots are being extensively studied for thermal infrared sensing applications. High-performance detectors can be realized using a traditional p-n junction device design; however, the heavily doped nature of intraband quantum dots presents a new challenge in realizing diode devices. In this work, we utilize a trait uniquely available in a colloidal quantum dot material system to overcome this challenge: the ability to blend two different types of quantum dots to control the electrical property of the resulting film. We report on the preparation of binary mixture films containing midwavelength infrared Ag2Se intraband quantum dots and the fabrication of p-n heterojunction diodes with strong rectifying characteristics. The peak specific detectivity at 4.5 μm was measured to be 107 Jones at room temperature, which is an orders of magnitude improvement compared to the previous generation of intraband quantum dot detectors.

Identifier

85117775243 (Scopus)

Publication Title

ACS Applied Materials and Interfaces

External Full Text Location

https://doi.org/10.1021/acsami.1c14749

e-ISSN

19448252

ISSN

19448244

PubMed ID

34613686

First Page

49043

Last Page

49049

Issue

41

Volume

13

Grant

ECCS-1809112

Fund Ref

National Science Foundation

This document is currently not available here.

Share

COinS