Midwavelength Infrared p-n Heterojunction Diodes Based on Intraband Colloidal Quantum Dots
Document Type
Article
Publication Date
10-20-2021
Abstract
As an emerging member of the colloidal semiconductor quantum dot materials family, intraband quantum dots are being extensively studied for thermal infrared sensing applications. High-performance detectors can be realized using a traditional p-n junction device design; however, the heavily doped nature of intraband quantum dots presents a new challenge in realizing diode devices. In this work, we utilize a trait uniquely available in a colloidal quantum dot material system to overcome this challenge: the ability to blend two different types of quantum dots to control the electrical property of the resulting film. We report on the preparation of binary mixture films containing midwavelength infrared Ag2Se intraband quantum dots and the fabrication of p-n heterojunction diodes with strong rectifying characteristics. The peak specific detectivity at 4.5 μm was measured to be 107 Jones at room temperature, which is an orders of magnitude improvement compared to the previous generation of intraband quantum dot detectors.
Identifier
85117775243 (Scopus)
Publication Title
ACS Applied Materials and Interfaces
External Full Text Location
https://doi.org/10.1021/acsami.1c14749
e-ISSN
19448252
ISSN
19448244
PubMed ID
34613686
First Page
49043
Last Page
49049
Issue
41
Volume
13
Grant
ECCS-1809112
Fund Ref
National Science Foundation
Recommended Citation
Hafiz, Shihab Bin; Al Mahfuz, Mohammad M.; Lee, Sunghwan; and Ko, Dong Kyun, "Midwavelength Infrared p-n Heterojunction Diodes Based on Intraband Colloidal Quantum Dots" (2021). Faculty Publications. 3730.
https://digitalcommons.njit.edu/fac_pubs/3730