Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
Document Type
Article
Publication Date
12-1-2022
Abstract
Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.
Identifier
85131521724 (Scopus)
Publication Title
Light Science and Applications
External Full Text Location
https://doi.org/10.1038/s41377-022-00861-1
e-ISSN
20477538
ISSN
20955545
Issue
1
Volume
11
Grant
997290
Fund Ref
National Science Foundation
Recommended Citation
Nguyen, Hieu P.T., "Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices" (2022). Faculty Publications. 2419.
https://digitalcommons.njit.edu/fac_pubs/2419
COinS
