Experimental Analysis of HfO2/XReRAM devices by the Capacitance Measurements
Document Type
Conference Proceeding
Publication Date
1-1-2023
Abstract
The main objective of this work is to present an analysis of the switching properties in Resistive Random-Access-Memory devices through the capacitance measurements of the metal-insulator-metal structure. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-Treated HfO2 and the other with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy related defects in the insulator (HfO2w}/trt}) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/\mu m}^{2 was observed for the same device when it was subjected to a 144 \mu s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems.
Identifier
85169583018 (Scopus)
ISBN
[9798350311907]
Publication Title
2023 IEEE Latin American Electron Devices Conference Laedc 2023
External Full Text Location
https://doi.org/10.1109/LAEDC58183.2023.10209123
Grant
303938/2020-0
Fund Ref
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
Recommended Citation
Costa, Fernando J.; Zeinati, Aseel; Trevisoli, Renan; Misra, D.; and Doria, Rodrigo T., "Experimental Analysis of HfO2/XReRAM devices by the Capacitance Measurements" (2023). Faculty Publications. 2334.
https://digitalcommons.njit.edu/fac_pubs/2334
