"Experimental Characterization of Switching Properties of ReRAM Devices" by Fernando J. Costa, Aseel Zeinati et al.
 

Experimental Characterization of Switching Properties of ReRAM Devices by the Capacitance Measurements

Document Type

Conference Proceeding

Publication Date

1-1-2023

Abstract

This paper aims to present for the first time an analysis of the switching properties of Resistive Random-Access-Memory devices in relation to the capacitance variation of the Metal-Insulator-Metal structure. A capacitance spread was observed when a set of pulses with varying widths and amplitudes was applied to operate the devices in the Multi-Level-Cell regime. The devices demonstrate an increase in the capacitance from 2.0338 to 2.0344 pF/μm2 from the pristine state to the maximum pulse width increment. This allows the devices to exhibit multiple capacitive reactance states, demonstrating the quantization of the conductance, required for the application in in-memory computing systems.

Identifier

85178506461 (Scopus)

ISBN

[9798350319453]

Publication Title

2023 37th Symposium on Microelectronics Technology and Devices Sbmicro 2023

External Full Text Location

https://doi.org/10.1109/SBMicro60499.2023.10302503

Grant

303938/2020-0

Fund Ref

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

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