PREPARATION OF GALLIUM NITRIDE USING ATOMIC NITROGEN, GENERATED BY A MICROWAVE CAVITY, AND IONIZED GALLIUM CLUSTERS.

Document Type

Conference Proceeding

Publication Date

12-1-1986

Abstract

Ionized cluster beam research at NJIT is aimed at growing high quality gallium nitride material, and other compound semiconductors and insulators, by utilizing the non-thermal energies of atoms from ionized clusters. The research has had three initial major objectives. The first is to develop practical methods of generating atomic nitrogen from molecular nitrogen and directing a beam of these atoms at a substrate in an ICB deposition system. The closely related objective is to accurately measure the substrate impingement rate of atomic and molecular species of nitrogen. The third objective is to find the optimum values for the ICB parameters associated with depositing gallium atoms with nonthermal kinetic energies in the 1-10 eV range at deposition rates suitable for the growth of gallium nitride at rates exceeding one micron per hour.

Identifier

0022942521 (Scopus)

First Page

189

Last Page

190

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