Photoelectrochemical etching of n-InP in a thin-film cell

Document Type

Article

Publication Date

12-1-1989

Abstract

The laser-induced photoelectrochemical etching of n-InP using a thin-film cell has been studied. A minimum in the reaction time was found as a function of etchant concentration for a given laser intensity. External potential biasing enhanced the reaction only for relatively low etchant concentrations.

Identifier

0005078184 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.101964

ISSN

00036951

First Page

2655

Last Page

2657

Issue

25

Volume

55

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