Microbeam high-resolution diffraction and x-ray standing wave methods applied to semiconductor structures

Document Type

Letter to the Editor

Publication Date

2-21-2004

Abstract

A new approach to conditioning x-ray microbeams for high angular resolution x-ray diffraction and scattering techniques is introduced. We combined focusing optics (one-bounce imaging capillary) and post-focusing collimating optics (miniature Si(004) channel-cut crystal) to generate an x-ray microbeam with a size of 10 μm and ultimate angular resolution of 14 μrad. The microbeam was used to analyse the strain in sub-micron thick InGaAsP epitaxial layers grown on an InP(100) substrate by the selective area growth technique in narrow openings between the oxide stripes. For the structures for which the diffraction peaks from the substrate and the film overlap, the x-ray standing wave technique was applied for precise measurements of the strain with a Δd/d resolution of better than 10-4.

Identifier

1442360630 (Scopus)

Publication Title

Journal of Physics D Applied Physics

External Full Text Location

https://doi.org/10.1088/0022-3727/37/4/L01

ISSN

00223727

First Page

L9

Last Page

L12

Issue

4

Volume

37

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