Thermally evaporated ZrO2

Document Type

Article

Publication Date

6-16-2004

Abstract

The characteristics of zirconium oxide (ZrO2) films, grown by standard thermal evaporation of zirconium while adding oxygen at constant partial pressure during evaporation, were investigated for the first time. The physical thickness (tphys in Å) and electrical thickness of the as-grown and annealed samples were studied. The dielectric constant as measured by the capacitance-voltage (C-V) technique is estimated to be around 36. C-V measurements taken at 100 kHz show a low hysteresis of ∼30 mV and the maximum capacitance seems to flatten out for the lower physical thickness, which might indicate presence of an interfacial oxide/silicate layer. © 2004 The Electrochemical Society. All rights reserved.

Identifier

2642522147 (Scopus)

Publication Title

Electrochemical and Solid State Letters

External Full Text Location

https://doi.org/10.1149/1.1701587

ISSN

10990062

First Page

F39

Last Page

F41

Issue

6

Volume

7

This document is currently not available here.

Share

COinS