Nitrogen doped ZnO (ZnO:N) thin films deposited by reactive RF agnetron sputtering for PEC applications

Document Type

Conference Proceeding

Publication Date

1-1-2012

Abstract

ZnO:N films were deposited by reactive RF magnetron sputtering on F-doped tin oxide coated glass substrates in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-deposited and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total photocurrents than ZnO thin films. ZnO:N thin films with reduced bandgaps were synthesized by reactive RF magnetron sputtering using ZnO target at 100°C followed by post deposition annealing at 500°C in air for 2 h. ZnO:N thin films showed enhanced N incorporation and shift of the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.

Identifier

84860842869 (Scopus)

ISBN

[9781118296073]

Publication Title

TMS Annual Meeting

First Page

669

Last Page

676

Volume

1

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