Solar driven hydrogen production with ZnO:GaN films

Document Type

Conference Proceeding

Publication Date

12-1-2012

Abstract

Transition-metal oxides are promising candidates for photoelectrochemical applications such as H2 production. ZnO has a direct bandgap and higher electron mobility than TiO2. Thus, ZnO is expected to be an even better candidate for photoelectrochemical applications. Like TiO 2, the bandgap of ZnO (3.3 eV) is too large to effectively use visible light, it is therefore critical to reduce the bandgap of ZnO. In this study, we will present mixed ZnO:GaN thin films. ZnO:GaN thin films were synthesized on FTO substrates by reactive rf magnetron sputtering. Mixed ZnO:GaN films exhibited better crystallinity compared to ZnO film and bandgap narrowing was observed for mixed ZnO:GaN thin films. The n-type conductivity is revealed for the both ZnO and ZnO:GaN thin films by Mott-Schottky plots as well as photocurrent polarity in I-V analysis. ZnO:GaN thin films exhibited improved photocurrents than ZnO film.

Identifier

84875760609 (Scopus)

ISBN

[9781622766536]

Publication Title

Materials Science and Technology Conference and Exhibition 2012 MS and T 2012

First Page

467

Last Page

471

Volume

1

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