Charge compensated (Al, N) co-doped zinc oxide (ZnO) films for photlelectrochemical application

Document Type

Conference Proceeding

Publication Date

12-1-2012

Abstract

ZnO thin films with significantly reduced bandgaps were synthesized by doping N and co-doping Al and N at 100°C. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance. ©The Electrochemical Society.

Identifier

84879379953 (Scopus)

ISBN

[9781607683322]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/1.3702425

e-ISSN

19386737

ISSN

19385862

First Page

183

Last Page

190

Issue

33

Volume

41

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