Bandgap narrowing of zinc oxide (ZnO) by nitrogen incorporation for solar driven hydrogen production

Document Type

Conference Proceeding

Publication Date

12-1-2012

Abstract

In this study, report on the synthesis of ZnO:N thin films by reactive RF magnetron sputtering using a Zn metal target & ZnO target in mixed N 2 and O2 ambient. We found that the N concentration in ZnO:N thin films can be effectively controlled by varying the RF power. ZnO:N films with narrowed bandgaps were synthesized. The photoelectrochemical properties of nitrogen-incorporated ZnO (ZnO:N) films were measured and compared with those of pure ZnO films. We find that nitrogen incorporation narrows the bandgap of ZnO and shifts the optical absorption into the visible-light regions. We further find that the ZnO:N films provide considerable photoresponse in the long-wavelength regions. As a result, the ZnO:N films exhibit higher photocurrents than pure ZnO films. ©The Electrochemical Society.

Identifier

84879721005 (Scopus)

ISBN

[9781607683261]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/1.3692522

e-ISSN

19386737

ISSN

19385862

First Page

39

Last Page

48

Issue

27

Volume

41

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